By D. J. Fisher
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Extra info for A Directory of Arrhenius Parameters: Non-metals
41(eV)/kT] It was suggested that the self-diffusion mechanism involved native defect complexes. 2Te in the absence or presence of an electric field. 07. This was done by means of energy-dispersive X-ray spectroscopy and secondary ion mass spectrometry. It was found that the interdiffusion coefficients of the constituent cation components (Cd, Hg) depended upon the x and y values, for growth temperatures ranging from 450 to 460C. Their asymmetrical concentration profiles exhibited steep slopes in the Cd-rich substrate and long tails in the Hg-rich layer.
80 layers was studied at 730 to 950C by using a modified radiotracer technique. The temperature dependence of the diffusion coefficients was found to be described by: Defect and Diffusion Forum Vol. 80 layers was studied at 730 to 950C by using a modified radiotracer technique. 2Te in the absence or presence of an electric field. 2Te solid solutions. 2Te at 230 to 500C. It was found that, at 280C, the diffusivity was proportional to the square root of the partial pressure of Hg. 41(eV)/kT] It was suggested that the self-diffusion mechanism involved native defect complexes.
5 x 10-12cm2/s. 24. This value was nearly equal to, or slightly lower than, the isotope effect for self-diffusion in Ge. Dorner: Philosophical Magazine A, 1986, 54, 539-51  Ge: Ge Diffusion Self-diffusivity in single crystals was studied at 822 to 1163K by using 71Ge radiotracer and sputtering-sectioning. 14(eV)/kT] Self-diffusion at 870 and 894K was also measured in Ga-doped and Sb-doped samples. It was found that the diffusivity was higher in n-type material and lower in p-type material, when compared with intrinsic material.
A Directory of Arrhenius Parameters: Non-metals by D. J. Fisher